Method for producing group III nitride semiconductor light-emitting device
US8765509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Mar 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 μm to 2 μm and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.