Patent · US Active

Shallow trench forming method

US8765575B2 · kind B2 · utility

3Cited by
7References
8Claims
0Family size

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Inventors

Key dates

Filing dateApr 2, 2013
Grant dateJul 1, 2014
Priority date—
Expiry dateApr 2, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76283
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for forming a trench filled with an insulator crossing a single-crystal silicon layer and a first SiO2 layer and penetrating into a silicon support, this method including the steps of forming on the silicon layer a second SiO2 layer and a first silicon nitride layer, forming the trench, and performing a first oxidizing processing to form a third SiO2 layer; performing a second oxidizing processing to form, on the exposed surfaces of the first silicon nitride layer a fourth SiO2 layer; depositing a second silicon nitride layer and filling the trench with SiO2; and removing the upper portion of the structure until the upper surface of the silicon layer is exposed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.