Method for extreme ultraviolet electrostatic chuck with reduced clamp effect
US8765582B2 · kind B2 · utility
92Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Sep 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.