Semiconductor substrate, electrode forming method, and solar cell fabricating method
US8766089B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 27, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jul 27, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.