Process for producing semiconductive porcelain composition and heater employing semiconductive porcelain composition
US8766145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2009 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | May 29, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/663
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material.There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.