Light-emitting diode with a mirror protection layer
US8766303B2 · kind B2 · utility
1Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.