Semiconductor structure and method for manufacturing the same
US8766358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Apr 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.