Patent · US Active

Single metal dual dielectric CMOS device

US8766370B2 · kind B2 · utility

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0References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Jacob C. Hooker · Hamburg, DE
Raghunath Singanamalla · Boise, US
Jasmine Petry · Brussels, BE

Key dates

Filing date	Dec 23, 2009
Grant date	Jul 1, 2014
Priority date	—
Expiry date	Jul 9, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/665
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor device that includes a semiconductor substrate having a first region and a second region, a pMOS transistor formed over the first region and an nMOS formed over the second region. The pMOS transistor has a gate structure that includes: an interfacial layer formed over the substrate; a AlOx layer formed over the interfacial layer; and a metal layer including Mo or W formed over the AlOx layer. The nMOS transistor has a gate structure that includes: the interfacial layer formed over the substrate; a DyOx layer formed over the interfacial layer; and the metal layer including Mo or W formed over the DyOx layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.