Field programming method for magnetic memory devices
US8767435B1 · kind B1 · utility
3Cited by
3References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 5, 2011 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Apr 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment of the invention, there is provided a method for operating a magnetic memory device. The method comprises selecting a subset of magnetic memory cells of the magnetic memory device; applying a first programming voltage to the selected subset of cells for a predetermined amount of time, wherein the programming voltage is selected to exceed a threshold operating voltage thereby to cause irreversible breakdown of the subset of cells; and reading selected cells of the magnetic memory device by passing a read current through a diode connected in series with each magnetic memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.