Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
US8767446B2 · kind B2 · utility
2Cited by
5References
15Claims
0Family size
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Key dates
| Filing date | Oct 12, 2011 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | May 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magneto resistive random access memory system includes a first magnetic-tunnel-junction device coupled to a first bit-line, a second magnetic-tunnel-junction device coupled to a second bit-line, a selection transistor coupled to the first and second bit-lines and a word-line coupled to the selection transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.