Nonvolatile memory device and method of manufacturing the same
US8767465B2 · kind B2 · utility
9Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jun 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device and method of manufacturing the same are provided. In the nonvolatile memory device, a blocking insulation layer is provided between a trap insulation layer and a gate electrode. A fixed charge layer spaced apart from the gate electrode is provided in the blocking insulation layer. Accordingly, the reliability of the nonvolatile memory device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.