Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US8771495B2 · kind B2 · utility
3Cited by
27References
19Claims
0Family size
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Key dates
| Filing date | Mar 5, 2013 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Mar 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.