Patent · US Active

Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal

US8771560B2 · kind B2 · utility

1Cited by

18References

13Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Ulrich Kretzer · Chemnitz, DE
Stefan Eichler · Dresden, DE
Thomas Bünger · Neubukow, DE

Key dates

Filing date	Feb 20, 2008
Grant date	Jul 8, 2014
Priority date	—
Expiry date	Feb 20, 2028

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/42
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10−3 Ωcm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.