Method of manufacturing semiconductor device
US8772173B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes providing a substrate having a gate structure, a source region, and a drain region formed thereon, and the gate structure includes a gate insulating layer and a gate electrode. The method also includes forming a first stress layer on the substrate, removing the first stress layer, and forming a second stress layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.