Transistor employing vertically stacked self-aligned carbon nanotubes
US8772782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.