High electron mobility transistor and method of driving the same
US8772834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2013 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.