Magnetic tunneling junction devices, memories, memory systems, and electronic devices
US8772846B2 · kind B2 · utility
3Cited by
2References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.