Patent · US Active

Magnetic domain wall shift register memory device readout

US8772889B2 · kind B2 · utility

6Cited by
11References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2012
Grant dateJul 8, 2014
Priority date—
Expiry dateNov 20, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/121
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.