Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance
US8773894B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Nov 26, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Nov 26, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.