Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such

US8778078B2 · kind B2 · utility

Assignee

• FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

• Ferdinand Scholz · Ulm, DE
• Peter Brückner · Gundelfingen, DE
• Frank Habel · Freiberg, DE
• Gunnar Leibiger · Freiberg, DE

Key dates

• Filing date: Aug 8, 2007
• Grant date: Jul 15, 2014
• Expiry date: Jan 17, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0254
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.