Plasma processing apparatus
US8778151B2 · kind B2 · utility
3Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2010 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Nov 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.