Epitaxial lift off in inverted metamorphic multijunction solar cells

US8778199B2 · kind B2 · utility

Assignee

• Emoore Solar Power, Inc. · US

Inventors

• Arthur Cornfeld · Sandia Park, US
• Daniel McGlynn · Albuquerque, US
• Tansen Varghese · Regensburg, DE

Key dates

• Filing date: May 7, 2012
• Grant date: Jul 15, 2014
• Expiry date: Sep 27, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.