Tunable polish rates by varying dissolved oxygen content
US8778203B2 · kind B2 · utility
4Cited by
5References
6Claims
0Family size
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Key dates
| Filing date | May 31, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Dec 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67075
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.