Ion-assisted direct growth of porous materials
US8778465B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 11, 2012 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Oct 6, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.