Mask design and OPC for device manufacture
US8778605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Feb 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.