Systems and methods for selective tungsten deposition in vias
US8778797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the dielectric layer; depositing a metal using chemical vapor deposition (CVD) during a first deposition period, wherein the first deposition period is longer than a first nucleation period that is required to deposit the metal on the metal layer; stopping the first deposition period prior to a second nucleation delay period, wherein the second nucleation period is required to deposit the metal on the dielectric layer; performing the depositing and the stopping N times, where N is an integer greater than or equal to one; and after the performing, depositing the metal using CVD during a second deposition period that is longer than the second nucleation delay period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.