High selectivity, low damage electron-beam delineation etch
US8778804B2 · kind B2 · utility
4Cited by
30References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | May 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant gas and an auxiliary gas that inhibits etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.