Field focusing features in a ReRAM cell

US8779405B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Feng Zhou · Ann Arbor, US
• Frank K. Baker, Jr. · Austin, US
• Ko-Min Chang · Austin, US
• Cheong Min Hong · Austin, US

Key dates

• Filing date: Jun 1, 2012
• Grant date: Jul 15, 2014
• Expiry date: Jun 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode.