Stress-alleviation layer for LED structures

US8779445B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chen-Hua Yu · Hsinchu, TW
• Hung-Ta Lin · Hsinchu, TW
• Ding-Yuan Chen · Taichung, TW
• Wen-Chih Chiou · Miaoli City, TW
• Chia-Lin Yu · Xigang, TW

Key dates

• Filing date: Jul 24, 2008
• Grant date: Jul 15, 2014
• Expiry date: Oct 10, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815

Abstract

A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.