SiGe HBT device and manufacturing method of the same
US8779473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device that includes a substrate; a buried oxide layer near a bottom of the substrate; a collector region above and in contact with the buried oxide layer; a field oxide region on each side of the collector region; a pseudo buried layer under each field oxide region and in contact with the collector region; and a through region under and in contact with the buried oxide layer. A method for manufacturing a SiGe HBT device is also disclosed. The SiGe HBT device can isolate noise from the bottom portion of the substrate and hence can improve the intrinsic noise performance of the device at high frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.