Semiconductor device
US8779526B2 · kind B2 · utility
14Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.