Method and apparatus for device parameter measurement
US8779796B2 · kind B2 · utility
2Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2010 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Sep 24, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring a parameter of a device in a circuit includes providing a device under test (DUT). The DUT includes a metal oxide semiconductor (MOS) transistor having a gate, a source, and a drain coupled to a first voltage supply node. The method further includes coupling a constant current source to the source of the transistor, coupling an operational amplifier to the transistor, and measuring a parameter of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.