Magnetic memory element with multi-domain storage layer
US8780619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.