Method and apparatus for inspecting a reflective lithographic mask blank and improving mask quality
US8785082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Sep 1, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks, and patterned mask repair. The system performs blank inspection to identify defects at multiple focal planes within the blank. The mask can be relocated on the blank and alterations to the pattern can be developed to compensate for the defects prior to prior to patterning the mask. Once the mask has been patterned, the reticle is inspected to identify any additional or remaining defects that were not picked up during blank inspection or fully mitigated through pattern compensation. The patterned reticle can then be repaired prior to integrated circuit fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.