Method of making semiconductor device
US8785231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2013 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jan 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.