Microelectronic transistor having an epitaxial graphene channel layer
US8785261B2 · kind B2 · utility
10Cited by
1References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2010 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to forming a graphene layer as a channel layer for a microelectronic transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.