Method of manufacturing semiconductor device
US8785325B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 15, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Feb 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming first and second cores on a processed material, forming a covering material having a stacked layer includes first and second layers, the covering material covering an upper surface and a side surface of the first and second cores, removing the second layer covering the first core, forming a first sidewall mask having the first layer on the side surface of the first core and a second sidewall mask having the first and second layers on the side surface of the second core by etching the covering material, removing the first and second cores, and forming first and second patterns having different width in parallel by etching the processed material in condition of using the first and second sidewall masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.