Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US8785333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2013 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Aug 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.