Graphene or carbon nanotube devices with localized bottom gates and gate dielectric
US8785911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.