Inventor · Ossining, NY, US

Katherine L. Saenger

157Patents
30h-index
183Co-inventors
93Inventor score

Filing activity: Dec 22, 1993 → Oct 23, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US5433651A In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing Physics 473 Expired
US6774010B2 Transferable device-containing layer for silicon-on-insulator applications Electricity 327 Expired
US6184121A Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same Electricity 281 Expired
US5789320A Plating of noble metal electrodes for DRAM and FRAM Electricity 244 Expired
US6140226A Dual damascene processing for semiconductor chip interconnects Emerging Cross-Sectional Technologies 218 Expired
US7923337B2 Fin field effect transistor devices with self-aligned source and drain regions Emerging Cross-Sectional Technologies 216 Active
US7795677B2 Nanowire field-effect transistors Emerging Cross-Sectional Technologies 138 Active
US6096590A Scalable MOS field effect transistor Electricity 134 Expired
US6413852B1 Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material Electricity 130 Expired
US6172385A Multilayer ferroelectric capacitor structure Electricity 122 Expired
US7968459B2 Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors Emerging Cross-Sectional Technologies 102 Active
US7125785B2 Mixed orientation and mixed material semiconductor-on-insulator wafer Electricity 85 Expired
US6265779A Method and material for integration of fuorine-containing low-k dielectrics Electricity 75 Expired
US6448176B1 Dual damascene processing for semiconductor chip interconnects Emerging Cross-Sectional Technologies 62 Expired
US6815329B2 Multilayer interconnect structure containing air gaps and method for making Electricity 58 Expired
US5869880A Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers Electricity 54 Expired
US6975032B2 Copper recess process with application to selective capping and electroless plating Electricity 51 Expired
US7361991B2 Closed air gap interconnect structure Electricity 48 Expired
US5828131A Low temperature formation of low resistivity titanium silicide Electricity 44 Expired
US5825609A Compound electrode stack capacitor Electricity 44 Expired
US7534675B2 Techniques for fabricating nanowire field-effect transistors Emerging Cross-Sectional Technologies 43 Active
US6737725B2 Multilevel interconnect structure containing air gaps and method for making Electricity 41 Expired
US5633781A Isolated sidewall capacitor having a compound plate electrode Electricity 39 Expired
US6577011B1 Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same Electricity 38 Expired
US6346484B1 Method for selective extraction of sacrificial place-holding material used in fabrication of air gap-containing interconnect structures Electricity 38 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.