Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US8785943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Aug 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.