High electron mobility transistor
US8785944B2 · kind B2 · utility
10Cited by
3References
38Claims
0Family size
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Key dates
| Filing date | Dec 6, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Dec 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.