Magnetic tunnel junction transistor devices
US8785966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Aug 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic tunnel junction transistor devices and methods for operating and forming magnetic tunnel junction transistor devices. In one aspect, a magnetic tunnel junction transistor device includes a first source/drain electrode, a second source/drain electrode, a gate electrode, and a magnetic tunnel junction disposed between the gate electrode and the second source/drain electrode. The magnetic tunnel junction includes a magnetic free layer that extends along a length of the gate electrode toward the first source/drain electrode such that an end portion of the magnetic free layer is disposed between the gate electrode and the first source/drain electrode. The magnetic tunnel junction transistor device switches a magnetization orientation of the magnetic free layer by application of a gate voltage to the gate electrode, thereby changing a resistance between the first and second source/drain electrodes through the magnetic free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.