High speed SiGe HBT and manufacturing method thereof
US8785977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Nov 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-speed SiGe HBT is disclosed, which includes: a substrate; STIs formed in the substrate; a collector region formed beneath the substrate surface and located between the STIs; an epitaxial dielectric layer including two portions, one being located on the collector region, the other being located on one of the STIs; a base region formed both in a region between and on surfaces of the two portions of the epitaxial dielectric layer; an emitter dielectric layer including two portions, both portions being formed on the base region; an emitter region formed both in a region between and on surfaces of the two portions of the emitter dielectric layer; a contact hole formed on a surface of each of the base region, the emitter region and the collector region. A method of manufacturing high-speed SiGe HBT is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.