Ferroelectric semiconductor transistor devices having gate modulated conductive layer

US8785995B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Catherine A. Dubourdieu · New York, US
• David J. Frank · Yorktown Heights, US
• Martin M. Frank · Dobbs Ferry, US
• Vijay Narayanan · New York, US
• Paul M. Solomon · Yorktown Heights, US
• Thomas Theis · Croton-on-Hudson, US

Key dates

• Filing date: May 16, 2011
• Grant date: Jul 22, 2014
• Expiry date: Dec 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

Ferroelectric semiconductor switching devices are provided, including field effect transistor (FET) devices having gate stack structures formed with a ferroelectric layer disposed between a gate contact and a thin conductive layer (“quantum conductive layer”). The gate contact and ferroelectric layer serve to modulate an effective work function of the thin conductive layer. The thin conductive layer with the modulated work function is coupled to a semiconductor channel layer to modulate current flow through the semiconductor and achieve a steep sub-threshold slope.