Semiconductor device and method of fabricating the same
US8786028B2 · kind B2 · utility
4Cited by
3References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Apr 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.