Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
US8786031B2 · kind B2 · utility
0Cited by
18References
10Claims
0Family size
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Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jul 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.