Power semiconductor devices having termination structures
US8786045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2010 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Sep 9, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one general aspect, a termination structure can include a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type where the plurality of pillars define a plurality of concentric rings surrounding an active area of a semiconductor device. The termination structure can include a conductive field plate where the plurality of pillars includes a first pillar coupled to the conductive field plate. The termination structure can include a dielectric layer where the plurality of pillars include a second pillar insulated by the dielectric layer from a portion of the conductive field plate disposed directly above the second pillar included in the plurality of pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.