Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate
US8786052B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Sep 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.