Semiconductor devices and methods of manufacturing the same
US8786058B2 · kind B2 · utility
6Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Apr 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.